CBSE Class 12 Physics 2025: question 15
Set in the CBSE Class 12 board exam of 2025, paper 55/1/1, section A, question 15, for 1 mark. Try it first; the hints and our step-by-step solution are below.
Q15 · 1 mark · Assertion-reasonCompetency-basedSemiconductor Electronics: Materials, Devices and Simple Circuits
Assertion (A) : We cannot form a p-n junction diode by taking a slab of a p-type semiconductor and physically joining it to another slab of a n-type semiconductor.
Reason (R) : In a p-type semiconductor while in a n-type semiconductor .
- (A)Both Assertion (A) and Reason (R) are true and Reason (R) is the correct explanation of Assertion (A).
- (B)Both Assertion (A) and Reason (R) are true, but Reason (R) is not the correct explanation of Assertion (A).
- (C)Assertion (A) is true, but Reason (R) is false.
- (D)Assertion (A) is false and Reason (R) is also false.
Source: official question paper from cbse.gov.in (PDF). See it in the full 2025 board paper, set 55/1/1.
Hints
Open one hint at a time and try again before the next.
Hint 1
Check the majority carriers in a p-type semiconductor.
Hint 2
Why can two slabs not simply be joined?
Step-by-step solution
Each step shows the marks it earns, as an examiner would award them. Checked by an independent re-solve from the question paper.
- ½ mark
A is true: physically joining two slabs leaves surface roughness far larger than the interatomic spacing, so there is no continuous junction.
- ½ mark
R is false: a p-type semiconductor has , and an n-type has , which is the opposite of what R states. Option (C).
Answer: Option (C)
Where the marks are
- Judges A true and R false (reversed carrier concentrations) (1 mark)
Revise the chapter
- Chapter: Semiconductor Electronics: Materials, Devices and Simple Circuits (notes, formulas, where marks are lost and every past question)
More questions from Semiconductor Electronics: Materials, Devices and Simple Circuits
- 2026 board paper, set 55/1/1, Q26 · 3 marksBriefly explain the two important processes that occur during the formation of a p-n junction.
- 2025 board paper, set 55/1/1, Q21 · 2 marksA p-type Si semiconductor is made by doping an average of one dopant atom per 5 × 10^7 silicon atoms. If the n…
- 2025 board paper, set 55/1/1, Q28 · 3 marksAnswer the following.
The question is transcribed from the official paper; figures are described in words. The solution, hints and chapter tag are ours. Spotted an error? Write tosupport@questionbuddy.in.