CBSE Class 12 Physics 2025: question 21
Set in the CBSE Class 12 board exam of 2025, paper 55/1/1, section B, question 21, for 2 marks. Try it first; the hints and our step-by-step solution are below.
Q21 · 2 marks · Very short answerSemiconductor Electronics: Materials, Devices and Simple Circuits
A p-type Si semiconductor is made by doping an average of one dopant atom per silicon atoms. If the number density of silicon atoms in the specimen is atoms , find the number of holes created per cubic centimetre in the specimen due to doping. Also give one example of such dopants.
Source: official question paper from cbse.gov.in (PDF). See it in the full 2025 board paper, set 55/1/1.
Hints
Open one hint at a time and try again before the next.
Hint 1
One acceptor atom contributes one hole. How many dopant atoms are there per m³?
Hint 2
Divide the Si number density by , then remember that 1 m³ = 10⁶ cm³.
Step-by-step solution
Each step shows the marks it earns, as an examiner would award them. Checked by an independent re-solve from the question paper.
- 1 mark
Each trivalent dopant atom creates one hole. Holes per m³ . Since , holes per cm³ .
- 1 mark
Example of such a (trivalent/acceptor) dopant: aluminium, boron, gallium or indium.
Answer: 10¹⁵ holes per cm³; dopant e.g. aluminium (or B, Ga, In)
Where the marks are
- Calculates m⁻³ and converts it to holes per cm³ (1 mark)
- Names a trivalent dopant such as Al, B, Ga or In (1 mark)
Revise the chapter
- Chapter: Semiconductor Electronics: Materials, Devices and Simple Circuits (notes, formulas, where marks are lost and every past question)
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