CBSE Class 12 Physics 2023: question 25
Set in the CBSE Class 12 board exam of 2023, paper 55/1/1, section B, question 25, for 2 marks. Try it first; the hints and our step-by-step solution are below.
Q25 · 2 marks · Very short answerSemiconductor Electronics: Materials, Devices and Simple Circuits
Briefly explain how the diffusion and drift currents contribute to the formation of potential barrier in a p-n junction diode.
Source: official question paper from cbse.gov.in (PDF). See it in the full 2023 board paper, set 55/1/1.
Hints
Open one hint at a time and try again before the next.
Hint 1
Start with why carriers cross the junction at all — concentration difference.
Hint 2
What do the carriers leave behind, and what field does that create?
Step-by-step solution
Each step shows the marks it earns, as an examiner would award them. Checked by an independent re-solve from the question paper.
- 1 mark
Due to the concentration gradient, holes diffuse from p to n side and electrons from n to p side, giving a diffusion current. They leave behind immobile ions (negative on p-side, positive on n-side) near the junction, forming a depletion (space charge) region.
- 1 mark
This space charge sets up an electric field from n to p, which drives minority carriers across the junction, giving a drift current opposite to the diffusion current. As diffusion continues, the field grows until drift current equals diffusion current (equilibrium, no net current); the potential difference then existing across the junction is the potential barrier.
Answer: Diffusion creates the space charge region; its field causes opposing drift; equilibrium (diffusion = drift) fixes the barrier potential.
Where the marks are
- Diffusion due to concentration gradient forms space charge/depletion region of immobile ions (1 mark)
- Electric field causes drift current opposite to diffusion; barrier potential at equality of the two (1 mark)
Revise the chapter
- Chapter: Semiconductor Electronics: Materials, Devices and Simple Circuits (notes, formulas, where marks are lost and every past question)
More questions from Semiconductor Electronics: Materials, Devices and Simple Circuits
- 2023 board paper, set 55/5/1, Q32(a) · 5 marksDraw the circuit arrangement for studying V-I characteristics of a p-n junction diode in (i) forward biasing a…
- 2023 board paper, set 55/5/1, Q32(b) · 5 marksName two important processes involved in the formation of a p-n junction diode. With the help of a circuit dia…
- Sample paper 2026-27, Q22 · 3 marksCompare the energy band diagrams of metals, insulators, and semiconductors. I. Explain how the band gap determ…
The question is transcribed from the official paper; figures are described in words. The solution, hints and chapter tag are ours. Spotted an error? Write tosupport@questionbuddy.in.